IRFD9220 데이터 시트보기 (PDF) - Intersil
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IRFD9220 Datasheet PDF : 6 Pages
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IRFD9220
Source to Drain Diode Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
ISD
ISDM
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Diode
D
G
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD
trr
QRR
TC = 25oC, ISD = -0.6A, VGS = 0V (Figure 12)
TJ = 150oC, ISD = -0.6A, dISD/dt = 100A/µs
TJ = 150oC, ISD = -0.6A, dISD/dt = 100A/µs
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature.
4. VDD = 25V, starting TJ = 25oC, L = 1210mH, RG = 25Ω, Peak IAS = 0.6A (Figures 14, 15).
Typical Performance Curves Unless Otherwise Specified
MIN TYP
-
-
-
-
MAX
-0.6
-4.8
UNITS
A
A
-
-
-1.5
V
-
150
-
ns
-
0.5
-
µC
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs AMBIENT
TEMPERATURE
-0.6
-0.4
-0.2
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
AMBIENT TEMPERATURE
-10
-1.0
10µs
100µs
1ms
-0.1
OPERATION IN THIS AREA
IS LIMITED BY rDS(ON)
10ms
100ms
-0.01 TC = 25oC
TJ = MAX RATED
DC
SINGLE PULSE
-0.002
-0.2
-1.0
-10
-100
-500
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA
-5
-10V
-9V
-4
-3
VGS = -8V
VGS = -7V
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX.
VGS = -6V
-2
VGS = -5V
-1
VGS = -4V
0
0
-10
-20
-30
-40
-50
VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. OUTPUT CHARACTERISTICS
4-53
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