SI3456DV-T1 데이터 시트보기 (PDF) - Vishay Semiconductors
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SI3456DV-T1 Datasheet PDF : 5 Pages
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Si3456DV
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = 250 mA
VDS = 0 V, VGS = "20 V
VDS = 30 V, VGS = 0 V
VDS = 30 V, VGS = 0 V, TJ = 70_C
VDS = 5 V, VGS = 10 V
VGS = 10 V, ID = 5.1 A
VGS = 4.5 V, ID = 4.3 A
VDS = 10 V, ID = 5.1 A
IS = 1.7 A, VGS = 0 V
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgt
Qgs
Qgd
Rg
td(on)
tr
td(off)
tf
trr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
VDS = 15 V, VGS = 5 V, ID = 5.1 A
VDS = 15 V, VGS = 10 V, ID = 5.1 A
VDD = 15 V, RL = 15 W
ID ^ 1 A, VGEN = 10 V, RG = 6 W
IF = 1.7 A, di/dt = 100 A/ms
Min
Typ
Max Unit
1.0
V
"100
nA
1
mA
5
15
A
0.037
0.045
W
0.051
0.065
13
S
1.2
V
5.7
9
12
20
nC
2.8
1.6
0.5
3.1
W
10
20
10
20
25
50
ns
10
20
60
80
www.vishay.com
2
Document Number: 70659
S-531725—Rev. C, 18-Aug-03
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