2SD12750P 데이터 시트보기 (PDF) - Panasonic Corporation
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2SD12750P Datasheet PDF : 3 Pages
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Power Transistors
2SD1275, 2SD1275A
Silicon NPN triple diffusion planar type darlington
For power amplification
Complementary to 2SB0949 and 2SB0949A
10.0±0.2
5.5±0.2
Unit: mm
4.2±0.2
2.7±0.2
■ Features
• High forward current transfer ratio hFE
• High-speed switching
φ 3.1±0.1
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings Ta = 25°C
1.4±0.1
1.3±0.2
Parameter
Symbol Rating
Unit
0.8±0.1
0.5+–00..12
Collector-base voltage 2SD1275 VCBO
60
V
/ (Emitter open)
2SD1275A
80
2.54±0.3
5.08±0.5
Collector-emitter voltage 2SD1275 VCEO
60
V
e e) (Base open)
2SD1275A
80
c e. d typ Emitter-base voltage (Collector open) VEBO
5
V
n d stag tinue Collector current
IC
2
A
a e cle con Peak collector current
ICP
4
A
lifecy , dis Collector power
TC = 25°C PC
35
W
123
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
Internal Connection
C
n u ct ped dissipation
2.0
rodu d ty Junction temperature
te tin ur P tinue Storage temperature
Tj
150
°C
Tstg −55 to +150 °C
ing fo iscon ■ Electrical Characteristics Ta = 25°C ± 3°C
B
E
in n follow ed d Parameter
Symbol
Conditions
Min Typ Max Unit
des , plan Collector-emitter voltage 2SD1275 VCEO IC = 30 mA, IB = 0
60
V
a o inclu type (Base open)
2SD1275A
80
c ed ce Base-emitter voltage
M is ntinu tenan Collector-base cutoff
isco ain current (Emitter open)
VBE
2SD1275 ICBO
2SD1275A
e/D e, m Collector-emitter cutoff
D anc typ current (Base open)
2SD1275 ICEO
2SD1275A
inten ance Emitter-base cutoff current (Collector open)
Ma inten Forward current transfer ratio
ned ma Collector-emitter saturation voltage
(pla Transition frequency
IEBO
hFE1
hFE2 *
VCE(sat)
fT
VCE = 4 V, IC = 2 A
VCB = 60 V, IE = 0
VCB = 80 V, IE = 0
VCE = 30 V, IB = 0
VCE = 40 V, IB = 0
VEB = 5 V, IC = 0
VCE = 4 V, IC = 1 A
VCE = 4 V, IC = 2 A
IC = 2 A, IB = 8 mA
VCE = 10 V, IC = 0.5 A, f = 1 MHz
1 000
1 000
2.8
V
1
mA
1
2
mA
2
2
mA
10 000
2.5
V
20
MHz
Turn-on time
ton
IC = 2 A, IB1 = 8 mA, IB2 = −8 mA,
0.5
µs
Storage time
tstg
VCC = 50 V
4.0
µs
Fall time
tf
1.0
µs
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
1 000 to 2 500 2 000 to 5 000 4 000 to 10 000
Publication date: February 2003
SJD00189BED
1
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