2SC4793 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2SC4793

Silicon NPN Power Transistor

New Jersey Semiconductor 

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

, One.

Silicon NPN Power Transistor

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

2SC4793

DESCRIPTION

• Collector-Emitter Breakdown Voltage-

: V(BR)CEo= 230V(Min)

• High Current-Gain Bandwidth Product

• Complement to Type 2SA1837

APPLICATIONS

• Power amplifier applications.

• Driver stage amplifier applications

PIN 1.BASE

2.COLLECTOR

3. EMITTER

TO-220F package

C-

-s-

ABSOLUTE MAXIMUM RATINGS(Ta=25°C)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO Collector-Base Voltage

230

V

VCEO

Collector-Emitter Voltage

230

V

VEBO

Emitter-Base Voltage

5

V

Ic

Collector Current-Continuous

1

A

IB

Base Current-Continuous

Collector Power Dissipation

@Ta=25°C

PC

Collector Power Dissipation

@Tc=25°C

Tj

Junction Temperature

0.1

A

2

W

20

150

'C

Tstg

Storage Temperature

-55-150 "C

0

J --

N

mm

DIM MEN

A 14.95

B 10.00

C 4.40

D 0.75

F 3.10

H 3.70

J 0.50

K 13.4

L 1.10

N 5.00

0 2.70

R 2.20

S 2.65

U 6.40

MAX

15.05

10.10

4.60

0.80

3.30

3.90

0.70

13.6

1.30

5.20

2.90

2.40

2.85

6.60

N.I Semi-Conductors reserves the right lo change test conditions, parameter limits and package dimensions \\itliout

notice. Information Furnished by N.I Semi-Conductors is believed to he hoth accurate and reliable at the time oFgoing

to press. lluvve\er. N.I Seini-Coiuliictors assumes no responsibility For any errors or omissions discovered in its use.

NJ Semi-C'(inductors encourages customers to verily that datasheets are current be Fore placing orders.

Quality Semi-Conductors

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