2SC4793 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC4793 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10mA; IB= 0
VcE(sat)
Collector-Emitter Saturation Voltage
lc= 500mA; IB= 50mA
VsE(on) Base-Emitter On Voltage
lc= 500mA ; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 230V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 5V; lc=0
hFE
DC Current Gain
COB
Output Capacitance
lc= 100mA;VCE=5V
|E=0; VcB=10V;f=.lMHz
fr
Current-Gain—Bandwidth Product
lc= 100mA; VCE= 10V
2SC4793
MIN TYP. MAX UNIT
230
V
1.5
V
1.0
V
1.0 u A
1.0 w A
100
320
20
PF
100
MHz
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