SSI2N80A 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SSI2N80A Datasheet PDF : 7 Pages
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SSW/I2N80A
N-CHANNEL
POWER MOSFET
Electrical Characteristics (TC=25ΟC unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Characteristic
Min. Typ. Max. Units
Test Condition
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
800 -- -- V
-- 1.06 -- V/ΟC
2.0 -- 3.5 V
-- -- 100 nA
-- -- -100
-- -- 25
-- -- 250 µA
VGS=0V,ID=250µA
ID=250µA See Fig 7
VDS=5V,ID=250µA
VGS=30V
VGS=-30V
VDS=800V
VDS=640V,TC=125ΟC
Static Drain-Source
On-State Resistance
-- -- 6.0 Ω VGS=10V,ID=0.85A O4 *
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
-- 1.56 -- Ω VDS=50V,ID=0.85A O4
-- 425 550
--
45
55
VGS=0V,VDS=25V,f =1MHz
pF
See Fig 5
-- 19 25
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-- 15 40
-- 22 55
VDD=400V,ID=2A,
-- 38 85 ns RG=16 Ω
-- 18 45
See Fig 13 O4 O5
Total Gate Charge
Gate-Source Charge
Gate-Drain(“Miller”) Charge
-- 22 30
-- 3.8 --
-- 11.6 --
VDS=640V,VGS=10V,
nC ID=2A
O4 O5
See Fig 6 & Fig 12
Source-Drain Diode Ratings and Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
Characteristic
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Min. Typ. Max. Units
Test Condition
-- -- 2
Integral reverse pn-diode
A
O1 -- -- 8
in the MOSFET
O4 -- -- 1.4 V TJ=25 ΟC,IS=1.7A,VGS=0V
-- 290 -- ns TJ=25 ΟC,IF=2A
-- 0.8 -- µC diF/dt=100A/µs
O4
Notes ;
O1 Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
O2 L=100mH, IAS=2A, VDD=50V, RG=27Ω, Starting TJ =25 ΟC
O3 ISD<_ 2A, di/dt <_90A/ µs, VDD <_BVDSS , Starting TJ =25 ΟC
O4 Pulse Test : Pulse Width = 250 µs, Duty Cycle <_2%
O5 Essentially Independent of Operating Temperature
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