SSI2N80A 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SSI2N80A Datasheet PDF : 7 Pages
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N-CHANNEL
POWER MOSFET
Fig 1. Output Characteristics
V GS
Top : 1 5 V
10V
8.0 V
7.0 V
100
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
10-1
10-2
10-1
@ Notes :
1. 250 µs Pulse Test
2. TC = 25 oC
100
101
VDS , Drain-Source Voltage [V]
Fig 3. On-Resistance vs. Drain Current
15
VGS = 10 V
10
SSW/I2N80A
Fig 2. Transfer Characteristics
100
10-1
10-2
2
150 oC
25 oC
- 55 oC
@ Notes :
1. VGS = 0 V
2. V = 50 V
DS
3. 250 µs Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Fig 4. Source-Drain Diode Forward Voltage
100
5
VGS = 20 V
@ Note : TJ = 25 oC
0
0
2
4
6
8
ID , Drain Current [A]
Fig 5. Capacitance vs. Drain-Source Voltage
600
C iss
C = C + C ( C = shorted )
iss gs gd ds
Coss= Cds+ Cgd
Crss= Cgd
400
200
C oss
C rss
@ Notes :
1. V = 0 V
GS
2. f = 1 MHz
0
100
101
VDS , Drain-Source Voltage [V]
10-1
150 oC
25 oC
@ Notes :
1. VGS = 0 V
2. 250 µs Pulse Test
10-2
0.2
0.4
0.6
0.8
1.0
1.2
VSD , Source-Drain Voltage [V]
Fig 6. Gate Charge vs. Gate-Source Voltage
VDS = 160 V
10
VDS = 400 V
V = 640 V
DS
5
@ Notes : I = 2.0 A
D
0
0
5
10
15
20
25
QG , Total Gate Charge [nC]
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