TK50P03M1 데이터 시트보기 (PDF) - Toshiba
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TK50P03M1 Datasheet PDF : 9 Pages
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TK50P03M1
6. Electrical Characteristics
6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
Test Condition
IGSS
IDSS
V(BR)DSS
V(BR)DSX
Vth
RDS(ON)
VGS = ±20 V, VDS = 0 V
VDS = 30 V, VGS = 0 V
ID = 10 mA, VGS = 0 V
ID = 10 mA, VGS = -20 V
VDS = 10 V, ID = 0.2 mA
VGS = 4.5 V, ID = 25 A
VGS = 10 V, ID = 25 A
Min Typ. Max Unit
±0.1
µA
10
30
V
15
1.3
2.3
7.5
9.8
mΩ
5.8
7.5
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
Test Condition
Ciss
Crss
Coss
rg
tr
ton
tf
toff
VDS = 10 V, VGS = 0 V, f = 1 MHz
VDS = 10 V, VGS = 0 V, f = 5 MHz
See Figure 6.2.1.
Min Typ. Max Unit
1700
pF
125
380
1.7
3.3
Ω
20
ns
25
22
64
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Symbol
Test Condition
Qg
Qgs1
Qgd
QSW
VDD ≈ 24 V, VGS = 10 V, ID = 50 A
VDD ≈ 24 V, VGS = 5 V, ID = 50 A
VDD ≈ 24 V, VGS = 10 V, ID = 50 A
Min Typ. Max Unit
25.3
nC
13.3
6.3
4.6
8.2
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed)
Diode forward voltage
(Note 3)
IDRP
VDSF
IDR = 50 A, VGS = 0 V
Note 3: Ensure that the channel temperature does not exceed 150.
Min Typ. Max Unit
150
A
-1.2
V
©2016-2019
Toshiba Electronic Devices & Storage Corporation
3
2019-04-19
Rev.5.0
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