UESD12ST5G(2008) 데이터 시트보기 (PDF) - ON Semiconductor
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UESD12ST5G Datasheet PDF : 4 Pages
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mESD3.3ST5G SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
IF
VF
Ppk
C
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Forward Current
Forward Voltage @ IF
Peak Power Dissipation
Max. Capacitance @VR = 0 and f = 1 MHz
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni-Directional TVS
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.1 V Max. @ IF = 10 mA for all types)
Device*
IR (mA) @ VBR (V) @ IT
VC (V)
Ppk
Device VRWM (V)
VRWM
(Note 2)
IT
@ Max IPP† IPP (A)† (W)†
Marking
Max
Max
Min
mA
Max
Max Max
mESD3.3ST5G
E0
3.3
2.5
5.0
1.0
10.9
10.4
113
mESD5.0ST5G
E2
5.0
1.0
6.2
1.0
13.3
8.8
117
mESD12ST5G
E3
12
1.0
13.5
1.0
23.7
5.4
128
*Other voltages available upon request.
†Surge current waveform per Figure 1.
2. VBR is measured with a pulse test current IT at an ambient temperature of 25°C.
C (pF)
Typ
80
65
30
100
tr
90
80
70
60
50
40
30
tP
20
10
0
0
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
20
40
60
80
t, TIME (ms)
Figure 1. 8 x 20 ms Pulse Waveform
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