BAT46W 데이터 시트보기 (PDF) - Jiangsu High diode Semiconductor Co., Ltd
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BAT46W Datasheet PDF : 4 Pages
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BA T46W
SOD1 23 Plastic-Encapsulate Diodes
Schottky Rectifier
Features
● High breakdown voltage
● Low turn-on voltage
● Guard ring construction for transient protection
+SOD1 23
Marking
● S9
Parameter
Peak repetitive peak reverse voltage
Working peak reverse voltage
FDoCrwblaorcdkcinogntvinoultoagues current
Repetitive peak forward current (Note 1) @ tp < 1.0s, Duty Cycle < 50%
Non-repetitive Peak Forward surge current @ t = 8.3ms
Power dissipation
Thermal resistance junction to ambient air
Junction temperature
Storage temperature
Symbol
VRRM
VRWM
VIFR
IFRM
IFSM
PD
RθJA
Tj
TSTG
Limit
100
150
350
750
500
200
125
-55~+150
Unit
V
mA
mA
mA
mW
℃/W
℃
℃
Electrical Characteristics (Ta=25℃ Unless otherwise specified）
Parameter
Symbol
Test Conditions Min
Typ
Max Unit
Reverse breakdown voltage(Note 2)
Reverse voltage leakage current
Forward voltage(Note 2)
VR
IR= 100µA
VR1=1.5V
IR
VR2=10V
VR3=50V
VR4=75V
IF1=0.1mA
VF
IF2=10mA
IF3=250mA
Diode capacitance
CT
VR=0, f=1MHz
VR=1V, f=1MHz
Notes: 1. Part mounted on FR-4 board with recommended pad layout.
2. Short duration pulse test used to minimize self-heating effect.
100
V
0.3
0.5
µA
1
2
0.25
0.45
V
1
20
pF
12
High Diode Semiconductor
1
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