BAT54S-E3-18 데이터 시트보기 (PDF) - Vishay Semiconductors
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BAT54S-E3-18 Datasheet PDF : 4 Pages
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BAT54, BAT54A, BAT54C, BAT54S
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL MIN.
Reserve breakdown voltage
IR = 100 μA (pulsed)
V(BR)
30
Leakage current
Pulsed test tp < 300 μs, δ <2 % at VR = 25 V
IR
IF = 0.1 mA, tp < 300 μs, δ < 2 %
VF
IF = 1 mA, tp < 300 μs, δ < 2 %
VF
Forward voltage
IF = 10 mA, tp < 300 μs, δ < 2 %
VF
IF = 30 mA, tp < 300 μs, δ < 2 %
VF
IF = 100 mA, tp < 300 μs, δ < 2 %
VF
Diode capacitance
VR = 1 V, f = 1 MHz
CD
Reserve recovery time
IF = 10 mA to IR = 10 mA,
iR = 1 mA, RL = 100 Ω
trr
LAYOUT FOR RthJA TEST
Thickness:
Fiberglas 15 mm (0.059")
Copper leads 0.3 mm (0.012")
7.5 (0.3)
3 (0.12)
12 (0.47)
15 (0.59)
0.8 (0.03)
1 (0.4)
2 (0.8)
2 (0.8)
1 (0.4)
TYP.
MAX.
2
240
320
400
500
800
10
5
UNIT
V
μA
mV
mV
mV
mV
mV
pF
ns
5 (0.2)
1.5 (0.06)
5.1 (0.2)
17451
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
1000
Tj = 125 °C
100
- 40 °C
10
1
25 °C
0.1
0.01
0
18867
0.2 0.4 0.6 0.8 1 1.2 1.4
VF - Forward Voltage (V)
Fig. 1 - Typical Forward Voltage Forward Current vs.
Various Temperatures
14
12
10
8
6
4
2
0
04
8 12 16 20 24 28
18868
VR - Reverse Voltage (V)
Fig. 2 - Diode Capacitance vs. Reverse Voltage VR
Rev. 2.0, 02-Jun-17
2
Document Number: 85508
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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