BAT17-05 데이터 시트보기 (PDF) - TY Semiconductor

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BAT17-05

Silicon Schottky Diode

TY Semiconductor 

Product specification

BAT17-04;BAT17-05;BAT17-06

Electrical Characteristics Ta = 25

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Breakdown voltage

V(BR)

I(BR) = 10 A

4

V

VR = 3 V

0.25

Reverse current

IR

VR = 4 V

10

A

VR = 3 V, TA = 60

1.25

IF = 0.1 mA

200

275

350

Forward voltage

VF

IF = 1 mA

250

340

450

mV

IF = 10 mA

350

425

600

Forward voltage matching(Note 1)

ÄVF

IF = 1 mA

20

mV

Diode capacitance

CT

VR = 0 , f = 1 MHz

0.4

0.55

0.75

pF

Differential forward resistance

RF

IF = 5 mA, f = 10 kHz

8

15

Note

1.ÄVF is the difference between lowest and highest VF in multiple diode component.

Marking

Type

Marking

BAT17-04

54s

BAT17-05

55s

BAT17-06

56s

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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