HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
104
7
5
3
2
tf
103
7
5
td(off)
3
2
102
7
5
3
Conditions:
2 VCC = 1000V
td(on)
101 VGE = ±15V
7
5
RG = 4.2Ω
3 Tj = 125°C
tr
2 Inductive load
100
100 2 3 5 7 101
23
5 7 102
COLLECTOR CURRENT IC (A)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT part & FWDi part)
10–3
101
2
3
5 710–22 3
5 710–12 3
5 7100
23
5 7 101
7
5
IGBT part:
Per unit base = Rth(j–c) = 0.19K/ W
3 FWDi part:
2 Per unit base = Rth(j–c) = 0.35K/ W
100
7
5
3
3
2
2
10–1
7
5
10–1
7
5
3
3
2
2
10–2
7
5
3
2
10–3
Single Pulse
TC = 25°C
10–2
7
5
3
2
10–3
10–52 3 5 710–42 3 5 710–3
TIME (s)
MITSUBISHI IGBT MODULES
CM75TU-34KA
HIGH POWER SWITCHING USE
REVERSE RECOVERY CHARACTERISTICS
OF FREE-WHEEL DIODE
(TYPICAL)
103
7 Conditions:
5 VCC = 1000V
VGE = ±15V
3 RG = 4.2Ω
2 Tj = 25°C
Inductive load
102
Irr
7
5
trr
3
2
101
100 2 3 5 7 101 2 3 5 7 102
EMITTER CURRENT IE (A)
GATE CHARGE
CHARACTERISTICS
(TYPICAL)
20
IC = 75A
16
VCC = 800V
VCC = 1000V
12
8
4
0
0 100 200 300 400 500
GATE CHARGE QG (nC)
Feb. 2009
4