Philips Semiconductors
PNP high-voltage transistors
Product specification
BSR20; BSR20A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Tamb
collector-base voltage
BSR20
BSR20A
collector-emitter voltage
BSR20
BSR20A
emitter-base voltage
collector current (DC)
peak collector current
base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
open emitter
open base
open collector
Tamb ≤ 25 °C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
MIN.
MAX.
UNIT
−
−130
V
−
−160
V
−
−120
V
−
−150
V
−
−5
V
−
−300
mA
−
−600
mA
−
−100
mA
−
250
mW
−65
+150
°C
−
150
°C
−65
+150
°C
VALUE
500
UNIT
K/W
1997 Apr 21
3