BSR202NL6327 데이터 시트보기 (PDF) - Infineon Technologies

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BSR202NL6327

OptiMOS®2 Small-Signal-Transistor

Infineon Technologies 

Parameter

Thermal characteristics

Thermal resistance,

junction - minimal footprint

Symbol Conditions

R thJA

BSR202N

min.

Values

typ.

Unit

max.

-

-

250 K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Drain-source leakage current

Gate-source leakage current

Drain-source on-state resistance

Transconductance

V (BR)DSS V GS= 0 V, I D= 250 µA

20

V GS(th) V DS=VGS , I D=30 µA

0.7

I DSS

V DS=20 V, V GS=0 V,

T j=25 °C

-

V DS=20 V, V GS=0 V,

T j=150 °C

-

I GSS

V GS=12 V, V DS=0 V

-

R DS(on) V GS=2.5 V, I D=3 A

-

V GS=4.5 V, I D=3.8 A

-

g fs

|V DS|>2|I D|R DS(on)max,

I D=3.8 A

-

-V

0.95

1.2

-

1 µA

-

100

-

100 nA

25

33 mΩ

17

21

17

-S

Rev. 1.07

page 2

2010-03-25

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