BSR202NL6327 데이터 시트보기 (PDF) - Infineon Technologies
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BSR202NL6327 Datasheet PDF : 9 Pages
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9 Drain-source on-state resistance
R DS(on)=f(T j); I D=3.8 A; V GS=4.5 V
40
10 Typ. gate threshold voltage
V GS(th)=f(T j); V DS=VGS; I D=30 µA
parameter: I D
1.6
BSR202N
30
98 %
20
typ
10
1.2
98 %
typ
0.8
2%
0.4
0
-60
-20
20
60
100
140
T j [°C]
11 Typ. capacitances
C =f(V DS); V GS=0 V; f =1 MHz; Tj=25°C
104
0
-60
-20
20
60
100
140
T j [°C]
12 Forward characteristics of reverse diode
I F=f(V SD)
parameter: T j
102
103
Ciss
Coss
102
Crss
101
100
10-1
10-2
25 °C
150 °C
150 °C, 98%
25 °C, 98%
101
0
Rev. 1.07
5
10
15
V DS [V]
10-3
20
0
page 6
0.4
0.8
1.2
V SD [V]
1.6
2010-03-25
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