2N6055 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N6055 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Darlingtion Power Transistor
DESCRIPTION
·Built-in Base-Emitter Shunt Resistors
·Low Collector-Emitter Saturation Voltage-
: VCE (sat)= 2.0V(Max.)@IC= 4.0A
·Collector-Emitter Sustaining Voltage-
VCEO(SUS)= 60V(Min)
·Complement to type 2N6053
APPLICATIONS
·Designed for general purpose amplifier and low frequency
switching applications.
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
60
V
VCEO Collector-Emitter Voltage
60
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current -Continuous
8
A
ICM
Collector Current-Peak
16
A
IB
Base Current
120
mA
PC
Collector Power Dissipation@TC=25℃ 100
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 1.75 ℃/W
2N6055
SPTECH website：www.superic-tech.com
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