2N6055 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

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2N6055

Silicon NPN Darlingtion Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Darlingtion Power Transistor

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0

VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 16mA

VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA

VBE(sat) Base-Emitter Saturation Voltage

IC= 8A; IB= 80mA

VBE(on) Base-Emitter On voltage

IC= 4A ; VCE= 3V

ICEO

Collector Cutoff current

ICEX

Collector Cutoff current

IEBO

Emitter Cut-off current

VCE= 30V; IB= 0

VCE= 60V;VBE(off)= -1.5V

VCE= 60V;VBE(off)= -1.5V,TC=150℃

VEB= 5V; IC= 0

hFE-1

DC Current Gain

IC= 4A ; VCE= 3V

hFE-2

DC Current Gain

IC= 8A ; VCE= 3V

COB

Output Capacitance

IE=0 ; VCB= 10V;ftest= 0.1MHz

2N6055

MIN MAX UNIT

60

V

2.0

V

3.0

V

4.0

V

2.8

V

0.5

mA

0.5

5.0

mA

2.0

mA

750 18000

100

220

pF

SPTECH website：www.superic-tech.com

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