2N3584 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N3584 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
DESCRIPTION
·Contunuous Collector Current-IC= 2A
·Power Dissipation-PD= 35W @TC= 25℃
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.75 V(Max)@ IC = 1A
APPLICATIONS
·Designed for high-speed switching and linear amplifier appli-
cation for high-voltage operational amplifiers, switching regu-
lators, converters,deflection stages and high fidelity amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
375
V
VCEO
Collector-Emitter Voltage
250
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
2.0
A
ICP
Collector Current-Peak
5.0
A
IB
Base Current
1.0
A
PC
Collector Power Dissipation@TC=25℃
35
W
TJ
Junction Temperature
200
℃
Tstg
Storage Temperature
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
5.0
℃/W
2N3584
SPTECH website：www.superic-tech.com
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