2N3584 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.
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2N3584 Datasheet PDF : 2 Pages
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SPTECH Product Specification
SPTECH Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 125mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 1A; IB= 100mA
VBE(on) Base-Emitter On Voltage
IC= 1A ; VCE= 10V
ICEO
Collector Cutoff Current
ICEX
Collector Cutoff Current
IEBO
Emitter Cutoff Current
VCE= 150V; IB= 0
VCE= 340V; VBE(off)= 1.5V
VCE= 300V; VBE(off)= 1.5V,TC=150℃
VEB= 6V; IC= 0
hFE-1
DC Current Gain
IC= 0.1A ; VCE= 10V
hFE-2
DC Current Gain
IC= 1A ; VCE= 2V
hFE-3
DC Current Gain
IC= 1A ; VCE= 10V
2N3584
MIN MAX UNIT
250
V
0.75
V
1.4
V
1.4
V
5.0
mA
1.0
3.0
mA
0.5
mA
40
8
80
25
100
SPTECH website：www.superic-tech.com
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