2N3233 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2N3233 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 200mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 3A; IB= 0.2A
VsEfon) Base-Emitter On Voltage
lc=3A;VCE=10V
ICEV
Collector Cutoff Current
VCE=100V;VBE(off)=1.5V
IEBO
Emitter Cutoff Current
VEB= 7.0V; lc= 0
hFE
DC Current Gain
lc=3A;Vce=10V
fr
Current Gain-Bandwidth Product
lc= 0.5A; VCE= 4V; f= 1 .0MHz
2N3233
MIN MAX UNIT
100
V
2.5
V
3.5
V
1
mA
5.0
mA
18
55
1.0
MHz
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