2N6360 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2N6360 Datasheet PDF : 2 Pages
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, One,
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2N6360
DESCRIPTION
• Excellent Safe Operating Area
• High DC Current Gain-
: hFE=15-60(Min)@lc = 6A
:VCE(sat)=1.4V(Max)@lc = 6A
APPLICATIONS
• Designed for high power applications and switching
circuits such as relay or solenoid drivers, DC-DC
converters or Inverters.
ABSOLUTE MAXIMUM RATINGS(Ta-25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
120
V
VCEO Collector-Emitter Voltage
100
V
VEBO Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
12
A
I CM
Collector Current-Peak
24
A
IB
Base Current-Continuous
4
A
PC
Collector Power Dissipation @Tc~254C
150
W
Tj
Junction Temperature
200
°C
Tstg
Storage Temperature
-65-200 'C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT
1.17 "C/W
3
PIN
1.BASE
^tS
2. EMITTER
r*
3. COLLECT OR (CASE)
2
TO-3 package
T , f
A
1 •N-1 ,[
-I J c
IE 1
:
— IU-0
t-K
/_
\
xdTx /
4\ rl ?5
1c.;
t
B
k, £Q
^w^s
<1
H3B
nun
DIM MIN MAX
A
3900
B 2530 36.87
C
7.80 330
D
090 1 10
E
140 1.60
1L-
10-92
H
S4$
K 11 .tO 1350
L 16?5 17,05
N 1940 1962
0
403 420
U 3000 3020
V
430 450
NJ Scmi-Conductors reserves the right to ehange tost conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. I hnvever, NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
N.I Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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