2N6714 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2N6714 Datasheet PDF : 1 Pages
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iJ
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
2N6714
2N6726
2N6715 NPN
2N6727 PNP
COMPLEMENTARY SILICON
POWER TRANSISTOR
TO-237 '
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
2N6714
2N6726
2N6715
2N6727
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Power Dissipation
Power Dissipation (Tc=25 C)
Operating and Storage
Junction Temperature
Thermal Resistance
Thermal Resistance
VCBO
VCEO
VEBO
1C
IB
PD
PD
Tj, Tstg
eJA
eJC
ko
50
30
ko
5.0
5.0
2.0
2.0
0.5
0.5
1.0
1.0
2.0
2.0
-65 TO +150
125
62.5
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=Rated VCBO
'EBO
VEB=Rated VEBO
BVCBQ
BVCBO
BVCEO
lc=1.0mA (2N67T4, 2N6726)
lc=1.0mA (2N6715, 2N6727)
IC=10mA (2N6714, 2N6726)
i»0
50
30
BVCEO
IC=10mA (2N6715, 2N6727)
40
BVEBO
lE=1.0raA
5.0
VVCBEE((SOANT))
1C=J,QA, IB-O-JA
VCE=KOV, IC=KQA
hFE
VCE=I.OV, IC=O.IA
60
hftFE
vCE=i-ov, IC=I.OA
VCE=10V, IC=50mA, f=20MHz
50
50
cob
VcBa10V, lE=0, f=1-OMHz
UNIT
V
V
V
A
A
W
W
'C/W
MAX UNIT
0.1 yA
0.1 yA
V
V
V
V
V
0,5 V
J.2 V
250
500 MHz
30 pF
NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice mformation furn.shed by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use NJ
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