2N5157 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

부품명

상세내역

제조사

2N5157

Silicon NPN Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon NPN Power Transistor

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 500V(Min)

·High Switching Speed

·Low Saturation Voltage

·Wide Area of Safe Operation

APPLICATIONS

·Designed for induatrial and military applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEV Collector-Emitter Voltage

700

V

VCEO Collector-Emitter Voltage

500

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

3.5

A

IB

Base Current-Continuous

2

A

PC

Collector Power Dissipation@TC=75℃

100

W

TJ

Junction Temperature

200

℃

Tstg

Storage Temperature

-65~200 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX UNIT

Rth j-c Thermal Resistance,Junction to Case

0.75 ℃/W

Rth j-a Thermal Resistance,Junction to Ambient 31.25 ℃/W

SPTECH website：www.superic-tech.com

2N5157

1

Share Link: