2N6107 데이터 시트보기 (PDF) - Inchange Semiconductor
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2N6107 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon PNP Power Transistors
Product Specification
2N6107 2N6109 2N6111
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter
sustaining voltage
2N6107
2N6109 IC=-0.1A ;IB=0
2N6111
VCEsat Collector-emitter saturation voltage IC=-7A;IB=-3A
VBE
Base-emitter on voltage
IC=-7A ; VCE=-4V
2N6107 VCE=-20V; IB=0
ICEO
Collector cut-off current 2N6109 VCE=-40V; IB=0
2N6111 VCE=-60V; IB=0
2N6107
VCE=-40V; VBE=-1.5V
VCE=-30V; BE=-1.5V,TC=125℃
ICEX
Collector cut-off current
2N6109
VCE=-60V; VBE=-1.5V
VCE=-50V; BE=-1.5V,TC=125℃
2N6111
VCE=-80V; VBE=-1.5V
VCE=-70V; BE=-1.5V,TC=125℃
IEBO
Emitter cut-off current
VEB=-5V; IC=0
2N6107 IC=-2A ; VCE=-4V
hFE-1
DC current gain
2N6109 IC=-2.5A ; VCE=-4V
2N6111 IC=-3A ; VCE=-4V
hFE-2
DC current gain
IC=-7A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-4V;f=1MHz
MIN TYP. MAX UNIT
-30
-50
V
-70
-3.5
V
-3.0
V
-1.0 mA
-0.1
-2.0
-0.1
-2.0
mA
-0.1
-2.0
-1.0 mA
30
150
2.3
10
MHz
2
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