2N5956 데이터 시트보기 (PDF) - Shenzhen SPTECH Microelectronics Co., Ltd.

부품명

상세내역

제조사

2N5956

Silicon PNP Power Transistor

Shenzhen SPTECH Microelectronics Co., Ltd. 

SPTECH Product Specification

SPTECH Silicon PNP Power Transistor

2N5956

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA; IB= 0

-40

V

VCER

Collector-Emitter Sustaining Voltage IC= -100mA; RBE= 100Ω

-45

V

VCEV

Collector-Emitter Sustaining Voltage IC= -100mA; VBE= -1.5V

-50

V

VCE(sat) Collector-Emitter Saturation Voltage IC= -3A; IB= -0.3A

-1.0

V

VBE(on) Base-Emitter On Voltage

ICEV

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= -35A ; VCE= -4V

VCE=-45V;VBE(off)=-1.5V

VCE=-45V;VBE(off)=-1.5V;TC=150℃

VCE= -25V; IB= 0

-2.0

V

-0.1

-2.0

mA

-1.0 mA

ICER

Collector Cutoff Current

VCE= -35V; RBE= 100Ω

-0.1 mA

IEBO

Emitter Cutoff Current

VEB= -5V; IC= 0

-0.1 mA

hFE-1

DC Current Gain

IC= -3A ; VCE= -4V

20

100

hFE-2

DC Current Gain

IC= -6A ; VCE= -4V

5

fT

Current-Gain—Bandwidth Product IC= -1.0A; VCE= -4V, ftest= 1MHz

4

MHz

SPTECH website：www.superic-tech.com

2

Share Link: