2N6718L(2017) 데이터 시트보기 (PDF) - Unisonic Technologies

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2N6718L
(Rev.:2017)

NPN GENERAL PLANAR TRANSISTOR

Unisonic Technologies 

2N6718

NPN SILICON TRANSISTOR

 ABSOLUTE MAXIMUM RATING (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

100

V

Collector-Emitter Voltage

Emitter-Base Voltage

VCEO

100

V

VEBO

5

V

Collector Current (Continue)

Collector Current (Pulse)

IC

1

A

IC

2

A

SOT-89

0.5

W

Total Power Dissipation

TO-126C

PD

1.6

W

TO-92

850

mW

Junction Temperature

TJ

+150

°C

Operating Temperature

TOPR

-40 ~ +125

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified)

PARAMETER

SYMBOL

TEST CONDITIONS

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage (note)

BVCBO IC=100uA

BVCEO IC=1mA

Emitter-Base Breakdown Voltage

Collector-Emitter Saturation Voltage

BVEBO IE=10A

VCE(SAT) IC=350mA, IB=35mA

Collector Cut-Off Current

DC Current Gain

ICBO

hFE1

hFE2

hFE3

VCB=80V

VCE=1V, IC=50mA

VCE=1V, IC=250mA

VCE=1V, IC=500mA

Current Gain - Bandwidth Product

Output Capacitance

fT VCE=10V, IC=50mA, f=100MHz

Cob VCB=10V, IE=0, f=1MHz

Note: Pulse test: PulseWidth≤380s, Duty Cycle≤2%

 CLASSIFICATION OF hFE2

MIN TYP MAX UNIT

100

V

100

V

5

V

350 mV

100 nA

80

50

300

20

50

MHz

20 pF

RANK

RANGE

A

50~115

B

95~300

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

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QW-R201-056.F

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