2N6718 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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2N6718

Silicon NPN transistor in a TO-126F Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

2N6718

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

PC

Tj

Tstg

DATA SHEET

数值

Rating

100

100

5.0

1.0

1.6

150

-55～150

单位

Unit

V

V

V

A

W

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector to Base Breakdown

Voltage

Collector to Emitter Breakdown

Voltage

Emitter to Base Breakdown

Voltage

符号

Symbol

VCBO

测试条件

Test Conditions

IC=0.1mA IE=0

VCEO IC=1.0mA IB=0

VEBO IE=0.01mA IC=0

Collector Cut-Off Current

ICBO

VCB=80V

IE=0

*hFE(1) VCE=1.0V IC=250mA

DC Current Gain

*hFE(2) VCE=1.0V IC=50mA

*hFE(3) VCE=1.0V

Collector to Emitter Saturation

Voltage*

*VCE(sat) IC=350mA

Transition Frequency

fT

VCE=10V

f=100MHz

Collector output capacitance

Cob

VCB=10V

f=1.0MHz

*Pulse Test:Pulse Width≤380us,Duty Cycle≤2%.

IC=500mA

IB=35mA

IC=50mA

IE=0

*脉冲测试：脉宽≤380us,占空比≤2%。

最小值 典型值 最大值 单位

Min Typ Max Unit

100

V

100

V

5.0

V

0.1 μA

50

250

80

20

0.35 V

50

MHz

20 pF

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