2N6718 데이터 시트보기 (PDF) - New Jersey Semiconductor
부품명
상세내역
제조사
2N6718 Datasheet PDF : 1 Pages
| |||
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
t One.
2N6716 2N6717 2N6718 NPN
2N6728 2N67.29. 2N6730 PNP
COMPLEMENTARY SILICON
POWER TRANSISTORS
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
JEDEC TO-237 (EBC) CASE
2N6716, 2N6728 Series types are Complementary Silicon Plastic
Power Transistors designed for general purpose power amplifier and switching applications
MAXIMUM RATINGS (TA=25°C unless otherwise noted)
SYMBOL
2N6717
2N6729
2N6718
2N673Q
UNIJ
Col lector-Bast; voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Col lector Current
Base Current
Power Dissipation
Power Dissipation (Tc=25°C)
Operating and Storage
Junction Temperature
Thermal Resi stance
Thermal Resi staiice
VCBO
60
VCEO
60
VEBO
'c
IB
80
100
V
80
100
V
5.0
V
2.0
A
0.5
A
1.0
W
2.0
W
J» stg
-65 TO +150
125
'c/w
62.5
'C/W
ELECTRICAL CHARACTERISTICS (TA=25°C)
SYMBOL
TEST CONDITIONS
<CBO
'EBO
BVCBO
BV CBO
BV CEO
BVCEO
BVEBO
^CE(SAT)
VBE(ON)
5?hFE
cob
VCBO
VEB=Rated VEP0
lc=0.1mA (2N6716, 2N6728)
lc=0.1mA (2N6717, 2N6729)
Ic=0.1mA (2N6718, 2N6730)
lc=KOmA (2N6716, 2N6728)
IC=1-OmA (2N6717, 2N6729)
lc=1.0mA (2N6718, 2N6730)
!E=0.1mA
lQ=250mA, lg=10mA
VCE=1.0V, lc=250mA
VCE=1.0V, ic=250mA
VCE»5-OV, lc=200mA, f=20MHz
VCB=10V, IE=0, f=1.0MHz
MIN
MAX
0.1
10
60
80
100
60
80
100
5-0-
0.5
1.2
?0
50
250
50
500
30
UNIT
yA
PA
V
V
V
V
V
V
V
V
V
MHz
Quality Semi-Conductors
Share Link: 