2N6732 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2N6732

PNP SILICON PLANAR MEDIUM POWERTRANSISTOR

New Jersey Semiconductor 

, One.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

2N6732

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at Tamb= 25°C

Operating and Storage Temperature Range

SYMBOL

VCBO

VCEO

VEBO

'CM

Ic

Ptot

Tj;T£tg

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

VALUE

-100

-80

-5

-2

-1

1

-55 to +200

UNIT

V

V

V

A

A

W

3C

ELECTRICAL CHARACTERISTICS (at Tamb= 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V(BR)CBO -100

V

lc=-100^A, IE=0

Collector-Emitter

Breakdown Voltage

V(BR)CEO -80

V

lc=-10mA, IB=0*

Emitter-Base

Breakdown Voltage

V(BR)EBO -5

V

!E=-1mA, lc=0

Collector Cut-Off

ICBO

Current

-0.1

HA

VCB=-80V, IE=0

Emitter Cut-Off Current 'EBO

Collector-Emitter

Saturation Voltage

VCE(sat]

-10

HA

-0.35 V

VEB=-5V, lc=0

lc=-350mA, !B=-35mA*

Base-Emitter Turn-On VBE(on)

Voltage

-1.0

V

IC=-350mA, VCE=-2VX

Static Forward Current HFE

100

lc=-10mA, VC^-2V*

Transfer Ratio

100

300

lc=-350mA, VCE=-2V*

Transition

Frequency

fj

50

500

MHz lc^-200mA, VCE=-5V

f =20 MHz

Collector-Base

CCB

Capacitance

20

pF

VCB=-1OV(f=1MHz

^Measured under pulsed conditions. Pulse width=300(xs. Duty cycle <2%

FEATURES

* 80VoltVCEO

* Gain of 100 at lc = 350 mA

E-Line

TO92 Compatible

Quality Semi-Conductors

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