2806A 데이터 시트보기 (PDF) - Unspecified
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2806A Datasheet PDF : 24 Pages
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KIA
SEMICONDUCTORS
160A，60V
N-CHANNEL MOSFET
2806A
6. Electrical characteristics
Parameter
Drain-source breakdown voltage
Zero gate voltage drain current
Gate threshold voltage
Gate leakage current
Drain-source on-state resistance
Gate resistance
Diode forward voltage
Reverse recovery time2
Reverse recovery charge2
Input capacitance2
Output capacitance2
Reverse transfer capacitance2
Turn-on delay time2
Rise time2
Turn-off delay time2
Fall time2
Total gate charge2
Gate-source charge2
Gate-drain charge2
Symbol
BVDSS
IDSS
VGS(th)
IGSS
RDS(on)1
Rg
VSD1
trr
Qrr
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
(TA=25°C,unless otherwise noted)
Test Conditions
Min Typ Max Units
VGS=0V,IDS=250μA
60
-
-
V
VDS=48V, VGS=0V
-
-
1
μA
TJ=85°C
-
-
10
VDS=VGS, ID=250μA
2.0 3.0
4.0
V
VGS=+25V, VDS=0V
-
VGS=10V,ID=60A
-
VDS=0V, VGS=0V,f=1MHz -
- +100 nA
3.5 4.5 mΩ
0.7
-
Ω
ISD=60A, VGS=0V
- 0.8 1.2
V
IF=60A ,VDD=50V
dlSD/dt=100A/μs
-
30
-
nS
-
50
-
nC
VDS=25V,VGS=0V,
f=1MHz
- 4376 -
- 857
-
pF
- 334
-
-
28
-
VDD=30V, IDS=60A,
-
18
-
ns
RG=25Ω,VGS=10V
-
42
-
-
54
-
VDS=48V, VGS=10V
IDS=60A
- 130
-
-
24
--
nC
-
47
--
Note:1:Pulse test;pulse width<300us duty cycle<2%.
2.Guaranteed by design,not subject to production testing.
3.Package limitation current is 75A,Calculated continuous current based on maximum allowable
junction temperature.
4:Repetitive rating,pulse width limited by junction temperature.
5:Starting TJ=25ºC,L=0.5mH.
3 of 6
Rev 1.2 May 2016
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