MB1M 데이터 시트보기 (PDF) - Diotech Company.

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MB1M

MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER

Diotech Company. 

MB1M THRU MB10M

MINI SILICON SURFACE MOUNT BRIDGE RECTIFIER

Reverse Voltage - 100 to 1000 Volts Forward Current - 0.8 Ampere

FEATURES

● Surge overload rating - 30 Amperes peak

● Ideal for printed circuit board

● Reliable low cost construction utilizing molded

● Glass passivated device

● Polarity symbols molded on body

MECHANICAL DATA

● Case : MBM, Molded Plastic

● Epoxy : Device has UL flammability classification 94V-0

● Mounting Position : Any

● Weight : 0.22 grams (approx.)

● Marking : Type Number

MBM

0.161 (4.10)

0.144 (3.65)

0.106 (2.70)

0.090 (2.30)

0.029 (0.74)

0.017 (0.43)

0.190 (4.83)

0.179 (4.55)

0.105 (2.67)

0.095 (2.41)

0.049 (1.24)

0.039 (0.99)

0.205 (5.21)

0.195 (4.95)

0.148 (3.75)

0.132 (3.35)

10° to 15°

0.147 (3.73)

0.137 (3.48)

0.016 (0.41)

0.006 (0.15)

0.028 (0.71)

0.020 (0.51)

1

2

3

4

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Characteristic

Symbol MB1M MB2M MB4M MB6M MB8M MB10M Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

RMS Reverse Voltage

V RRM

VRWM

VR

100

200

400

600

800 1000

V

VR(RMS)

70

140

280

420

560

700

V

Average Rectified Output Current (Note 1) @TA = 40°C

IO

0.8

A

Non-Repetitive Peak Forward Surge Current 8.3ms

Single half sine-wave superimposed on rated load

(JEDEC Method)

I2t Rating for Fusing (t < 8.3ms)

Forward Voltage per element

Peak Reverse Current

At Rated DC Blocking Voltage

@IF = 0.8A

@TA = 25°C

@TA = 125°C

Typical Junction Capacitance per leg (Note 2)

Typical Thermal Resistance per leg (Note 1)

Operating and Storage Temperature Range

I FSM

I2t

VFM

I RM

Cj

R JA

R JL

Tj, TSTG

Note: 1. Mounted on glass epoxy PC board with 1.3mm2 solder pad.

2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.

30

10

1.1

5.0

500

25

85

20

-55 to +150

A

A2s

V

µA

pF

°C/W

°C

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