MBR16150 데이터 시트보기 (PDF) - New Jersey Semiconductor

부품명

상세내역

제조사

MBR16150

Schottky Barrier Rectifier

New Jersey Semiconductor 

Eu <^£.mL-donaactoi Lrroaucti, One.

20 STERN AVE.

SPRINGFIELD, NEW JERSEY 07081

U.S.A.

Schottky Barrier Rectifier

TELEPHONE: (973) 376-2922

(212)227-6005

FAX: (973) 376-8960

MBR16150

FEATURES

• Low Forward Voltage

• 170°C Operating Junction Temperature

• Low Power Loss/High Efficiency

• High Surge Capacity

APPLICATIONS

• For use in low voltage, high frequency inverters, free

wneeung, ana poianiy proieciion appncaiions.

MECHANICAL CHARACTERISTICS

• Case: Epoxy, Molded

• Finish: All External Surfaces Corrosion Resistant and

Terminal Leads are Readily Solderable

• Lead Temperature for Soldering Purposes: 26CTC Max.

for 1 0 Seconds

ABSOLUTE MAXIMUM RATINGS(Ta=25'C)

SYMBOL

PARAMETER

VALUE UNIT

VRRM

DC Blocking Voltage

150

V

Ip(AV)

Average Rectified Forward Current

(Rated VR)TC=1 33 °C

8

A

Nonrepetitive Peak Surge Current

IFSM

(Surge applied at rated load conditions half-

210

A

wave, single phase, 60Hz)

Tj

Junction Temperature

170

°C

Tstg

Storage Temperature Range

-50-170 "C

» /-^ •

•

TO-220C package

IVI^U

JL =kD"y

» A

Ii

1 It

f^ , _ .

m

y'

f

C

-» • •-S

—tsoo-

V*

,„»

mm

DIM MIN

A 15.70

B 9.90

C 4.20

D 0.70

F 3.40

G 4.98

H 2.70

J 0.44

K 13.20

L 1.10

Q 2.70

R 2.50

S 1.29

U 6.45

V 8.66

MAX

15.90

10.10

4.40

0.90

3.60

5.18

2.90

0.46

13.40

1.30

2.90

2.70

1.31

6.65

8.86

N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without

notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going

to press. However, NJ Semi-Conductors assumes no responsibilityfor any errors or omissions discovered in its use.

NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors

Share Link: