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BCW66H 데이터 시트보기 (PDF) - Continental Device India Limited

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BCW66H
CDIL
Continental Device India Limited CDIL
BCW66H Datasheet PDF : 3 Pages
1 2 3
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SOT-23 Formed SMD Package
BCW66F, BCW66G
BCW66H
GENERAL PURPOSE TRANSISTOR
N–P–N transistor
Marking
BCW 66F = EF
BCW 66G = EG
BCW 66H = EH
PACKAGE OUTLINE DETAILS
ALL DIMENSIONS IN mm
Pin configuration
1 = BASE
2 = EMITTER
3 = COLLECTOR
3
1
2
ABSOLUTE MAXIMUM RATINGS
Collector–base voltage (open emitter)
Collector–emitter voltage (open base)
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation at Tamb = 25°C
D.C. current gain
–IC = 100 mA; –VCE = 10 V
–IC = 10 mA; VCE = 1 V
–IC = 100 mA; VCE = 1 V
–IC = 500 mA; VCE = 2 V
–VCBO
–VCEO
–VEBO
–IC
Ptot
hFE
BCW66F 66G
max. 75 75
max. 45 45
max. 5
5
max. 800 800
max 225 225
66H
75 V
45 V
5V
800 mA
225 mW
min. 35
min. 75
min. 100
max. 250
min. 35
50 80
110 180
160 250
400 630
60 100
Continental Device India Limited
Data Sheet
Page 1 of 3

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