BCX5516TA(2011) 데이터 시트보기 (PDF) - Diodes Incorporated.

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BCX5516TA
(Rev.:2011)

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IN SOT89

Diodes Incorporated. 

BCX 54 / 55 / 56

Maximum Ratings @ TA = 25°C unless otherwise specified

Characteristic

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Peak Pulse Collector Current

Continuous Base Current

Peak Pulse Base Current

Symbol

VCBO

VCEO

VEBO

IC

ICM

IB

IBM

BCX54

BCX55

BCX56

Unit

45

60

100

V

45

60

80

V

5

V

1

1.5

A

100

mA

200

Thermal Characteristics @ TA = 25°C unless otherwise specified

Characteristic

Power Dissipation (Note 4)

Thermal Resistance, Junction to Ambient (Note 4)

Thermal Resistance, Junction to Leads (Note 5)

Operating and Storage Temperature Range

Symbol

PD

RθJA

RθJL

TJ, TSTG

Value

1

124

10.0

-65 to +150

Unit

W

°C/W

°C/W

°C

Notes:

4. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is measured

when operating in a steady-state condition.

5. Thermal resistance from junction to solder-point (on the exposed collector pad).

BCX 54 / 55 / 56

Datasheet Number: DS35369 Rev. 2 – 2

2 of 7

www.diodes.com

June 2011

© Diodes Incorporated

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