BCX5510TC 데이터 시트보기 (PDF) - Diodes Incorporated.

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BCX5510TC

NPN MEDIUM POWER TRANSISTORS IN SOT89

Diodes Incorporated. 

BCX54 /55 /56

Electrical Characteristics (@ TA = +25°C, unless otherwise specified.)

Characteristic

Collector-Base

Breakdown Voltage

Collector-Emitter

Breakdown Voltage (Note 11)

Emitter-Base Breakdown Voltage

BCX54

BCX55

BCX56

BCX54

BCX55

BCX56

Symbol

BVCBO

BVCEO

BVEBO

Min

Typ

45

60

—

100

45

60

—

80

6

—

Collector Cut-Off Current

ICBO

—

—

Emitter Cut-Off Current

Static Forward Current Transfer

Ratio (Note 11)

All versions

10 gain grp

16 gain grp

Collector-Emitter Saturation Voltage (Note 11)

Base-Emitter Turn-On Voltage (Note 11)

IEBO

hFE

VCE(sat)

VBE(on)

—

—

25

—

40

—

25

—

63

—

100

—

—

—

—

—

Transition Frequency

fT

150

—

Output Capacitance

Cobo

—

—

Note:

11. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.

Max

—

—

—

0.1

20

20

—

250

—

160

250

0.5

1.0

—

25

Unit

Test Condition

V IC = 100µA

V IC = 10mA

V

µA

nA

—

V

V

MHz

pF

IE = 100µA

VCB = 30V

VCB = 30V, TA = +150°C

VEB = 5V

IC = 5mA, VCE = 2V

IC = 150mA, VCE = 2V

IC = 500mA, VCE = 2V

IC = 150mA, VCE = 2V

IC = 150mA, VCE = 2V

IC = 500mA, IB = 50mA

IC = 500mA, VCE = 2V

IC = 50mA, VCE = 10V

f = 100MHz

VCB = 10V, f = 1MHz

0.8

0.6

0.4

0.2

0

0

1

2

3

4

5

VCE, COLLECTOR-EMITTER VOLTAGE (V)

Fig. 1 Typical Collector Current

vs. Collector-Emitter Voltage

250

200

150

100

50

0

0.001

0.01

0.1

1

10

IC, COLLECTOR CURRENT (A)

Fig. 2 Typical DC Current Gain vs. Collector Current

BCX54 / 55 / 56

Datasheet Number: DS35369 Rev. 8 - 2

4 of 7

www.diodes.com

November 2015

© Diodes Incorporated

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