BCX56-10 데이터 시트보기 (PDF) - Bruckewell Technology LTD
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BCX56-10 Datasheet PDF : 5 Pages
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NPN Silicon AF Transistors
BCX54/BCX55/BCX56
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
Collector-base breakdown voltage
Collector-emitter breakdown voltage
V(BR)CBO
V(BR)CEO
IC=100μA IB=0
IC=10mA IB=0
BCX54 45
BCX55 60
BCX56 100
BCX54 45
BCX55 60
BCX56 80
UNIT
V
V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA IC=0
5
V
Collector cut-off current
DC current gain
VCB=30V IE=0
ICBO
VCB=30V IE=0,TA=150℃
100 nA
20 μA
VCE=2V IC=5mA
hFE
VCE=2V IC=150mA
VCE=2V IC=500mA
25
40 250
25
Collector-emitter saturation voltage VCE(sat) IC=500mA IB=50mA
0.5 V
Base-emitter voltage
VBE
IC=500mA ,VCE=2V
1V
Transition frequency
fT
VCE=10V, IC=50mA,
100
f=20MHz
MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
2
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