BCR3KM-12LA 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.
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BCR3KM-12LA Datasheet PDF : 7 Pages
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BCR3KM-12LA
Holding Current vs.
Junction Temperature
103
7
Typical Example
5
3
2
102
7
5
3
2
101
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Breakover Voltage vs.
Junction Temperature
160
Typical Example
140
120
100
80
60
40
20
0
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Commutation Characteristics
7
5 Main Voltage
(dv/dt)c
3
Main Current
IT
2
τ
101
7
5
Minimum
3 Characteristics
2 Value
Time Typical Example
VD Tj = 125°C
(di/dt)c
IT = 4A
τ = 500µs
Time VD = 200V
f = 3Hz
III Quadrant
100
7100
I Quadrant
2 3 5 7 101
2 3 5 7 102
Rate of Decay of On-State
Commutating Current (A/ms)
Latching Current vs.
Junction Temperature
103
7
5
3
2
Distribution
T2+, G–
102
Typical Example
7
5
3
2
101
7
5
3
2
100
TT22+–,,
G+
G–
Typical Example
–60 –40–20 0 20 40 60 80 100 120 140
Junction Temperature (°C)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage
160
Typical Example
140
Tj = 125°C
120
100
80
60
III Quadrant
40
20
I Quadrant
0101 2 3 5 7102 2 3 5 7103 2 3 5 7104
Rate of Rise of Off-State Voltage (V/µs)
Gate Trigger Current vs.
Gate Current Pulse Width
103
7
Typical Example
5
IRGT III
3
IRGT I
2
IFGT I
102
7
5
3
2
101100 2 3 5 7 101 2 3 5 7 102
Gate Current Pulse Width (µs)
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