EMP111 데이터 시트보기 (PDF) - Excelics Semiconductor, Inc.
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EMP111 Datasheet PDF : 3 Pages
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UPDATED 10/05/2004
Typical Performance:
1. Small Signal Performance (@7V, 400mA)
EMP111
7.0 – 9.0 GHz Power Amplifier MMIC
20
15
10
5
0
-5
-10
-15
-20
-25
6
EMP111 Small Signal Performance
DB(|S[2,1]|) *
DB(|S[1,1]|) *
DB(|S[2,2]|) *
7
8
9
10
11
Frequency (GHz)
2. OIMD VS Pout @7V, 400mA (@8GHz, ∆f=10MHz)
EMP111 OIMD (dBc) vs. Pout(dBm)
0
-5
-10
-15
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
-70
0
OIMD3
5
10
15
20
25
Each Tone Pout (dBm)
3. P-1 VS Vds @Idsq=400mA
EMP111 P1dB(dBm) vs. Vds
30
29
28
27
26
25
24
23
22
6
7
8
9
10
Frequency (GHz)
Vds=5V
Vds=7V
APPLICATION INFORMATION (CAUTION: THIS IS AN ESD SENSITIVE DEVICE)
Chip carrier should match GaAs thermal coefficienat of expansion and have high thermal conductivity, such as copper
tungsten or copper molybdenum. The chip carrier should be nickel-gold plated and capable of withstanding 325ºC for 20
minutes.
Die attach should be done with Gold/Tin (80/20) eutectic alloy in inert ambient gas. The backside is used as heatsinking,
DC, and RF contacts.
All die attach and wire bond equipment, especially the tools which touch a die, should be well grounded to avoid accidental
discharge through a die.
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 3
Revised October 2004
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