MAT01 데이터 시트보기 (PDF) - Analog Devices
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MAT01 Datasheet PDF : 12 Pages
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MAT01
Data Sheet
VCB = 15 V, IC = 10 µA, −55°C ≤ TA ≤ +125°C, unless otherwise noted.
Table 2.
Parameter
OFFSET VOLTAGE/CURRENT
Offset Voltage
Average Offset Voltage Drift1
Offset Current
Average Offset Current Drift2
BIAS CURRENT
CURRENT GAIN
LEAKAGE CURRENT
Collector to Base Leakage Current
Collector to Emitter Leakage Current
Collector to Collector Leakage Current
Symbol Test Conditions/Comments
VOS
TCVOS
IOS
TCIOS
ΙΒ
hFE
ICBO
TA = 125°C, VCB = 30 V, IE = 03
ICES
TA = 125°C, VCE = 30 V, VBE = 01, 3
ICC
TA = 125°C, VCC = 30 V1
MAT01AH
MAT01GH
Min Typ Max Min Typ Min Unit
0.06 0.15
0.15 0.50
0.9 8.0
10 90
28 60
167 400
77
0.14 0.70 mV
0.35 1.8 µV/°C
1.5 15.0 nA
15 150 pA/°C
36 130 nA
300
15 80
50 300
30 200
25 200 nA
90 400 nA
50 400 nA
( ) 1 Guaranteed by VOS test
TCVOS
≅VOS
T
for VOS
<<VBE
, T = 298 K for TA = 25°C.
2 Guaranteed by IOS test limits over temperature.
3 The collector to base (ICBO) and collector to emitter (ICES) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a
potential that is lower than either collector voltage.
Rev. C | Page 4 of 12
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