MAT01 데이터 시트보기 (PDF) - Analog Devices

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MAT01

Matched Monolithic Dual Transistor

Analog Devices 

Data Sheet

ABSOLUTE MAXIMUM RATINGS

Table 3.

Parameter1

Breakdown Voltage of

Collector to Base Voltage (BVCBO)

Collector to Emitter Voltage (BVCEO)

Collector to Collector Voltage (BVCC)

Emitter to Emitter Voltage (BVEE)

Emitter to Base Voltage (BVEBO)2

Current

Collector (IC)

Emitter (IE)

Total Power Dissipation

Case Temperature ≤ 40°C3

Ambient Temperature ≤ 70°C4

Temperature Range

Operating

Junction

Storage

Lead Temperature (Soldering, 60 sec)

Rating

45 V

45 V

45 V

45 V

5V

25 mA

25 mA

1.8 W

500 mW

−55°C to +125°C

−55°C to +150°C

−65°C to +150°C

300°C

1 Absolute maximum ratings apply to packaged devices.

2 Application of reverse bias voltages in excess of rating shown can result in

degradation of hFE and hFE matching characteristics. Do not attempt to

measure BVEBO greater than the 5 V rating.

3 Rating applies to applications using heat sinking to control case

temperature. Derate linearity at 16.4 mW/°C for case temperatures above

40°C.

4 Rating applies to applications not using heat sinking; device in free air only.

Derate linearity at 6.3 mW/°C for ambient temperatures above 70°C.

MAT01

Stresses above those listed under Absolute Maximum Ratings

may cause permanent damage to the device. This is a stress

rating only; functional operation of the device at these or any

other conditions above those indicated in the operational

section of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

device reliability.

ESD CAUTION

Rev. C | Page 5 of 12

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