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S1JB-13-F(2011) 데이터 시트보기 (PDF) - Diodes Incorporated.

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S1JB-13-F
(Rev.:2011)
Diodes
Diodes Incorporated. Diodes
S1JB-13-F Datasheet PDF : 4 Pages
1 2 3 4
S1A/B - S1M/B
Maximum Ratings @TA = 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitance load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ TT = 100°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on rated load
Symbol
VRRM
VRWM
VR
VR(RMS)
IO
IFSM
S1
A/AB
50
35
S1
B/BB
100
70
S1
D/DB
200
140
S1
G/GB
400
280
1.0
30
S1
J/JB
600
420
S1
S1
K/KB M/MB
800 1000
560 700
Unit
V
V
A
A
Thermal Characteristics
Characteristic
Typical Thermal Resistance, Junction to Terminal (Note 4)
Operating and Storage Temperature Range
Symbol
RθJT
TJ, TSTG
Value
30
-65 to +150
Unit
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
Symbol
Min
Typ
Max
Forward Voltage
@ IF = 1.0A
VFM
-
Peak Reverse Leakage Current
at Rated DC Blocking Voltage
@ TA = 25°C
@ TA = 125°C
IRM
-
-
Reverse Recovery Time (Note 5)
trr
-
Typical Total Capacitance (Note 6)
CT
-
-
1.1
-
5.0
-
100
1.8
3.0
10
-
Notes:
4. Thermal resistance junction to terminal, unit mounted on PC board with 5.0 mm2 (0.013 mm thick) copper pads as heat sink.
5. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A.
6. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
Unit
V
μA
μs
pF
1.0
0.8
0.6
0.4
0.2
Resistive or
inductive load
0
40 60 80 100 120 140 160 180
TT, TERMINAL TEMPERATURE (°C)
Fig. 1 Forward Current Derating Curve
10
1.0
0.1
0.01
0
0.4
0.8
1.2
1.6
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
S1A/B - S1M/B
Document number: DS16003 Rev. 22 - 2
2 of 4
www.diodes.com
October 2011
© Diodes Incorporated

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