S1AB 데이터 시트보기 (PDF) - Diode Semiconductor Korea
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S1AB Datasheet PDF : 2 Pages
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Diode Semiconductor Korea
S1AB-S1MB
FIG.1 -- FORWARD DERATING CURVE
1.2
Resistive or
inductive Load
1.0
0.8
0.6
0.4
0.2X0.2(5.0X5.0mm)
THICK COPPERPAND
AREAS
0.2
0
0
25 50 75 100 125 150 175
AMBIENT TEMPERATURE
FIG.3 -- TYPICAL FORWARD CHARACTERISTICS
100
10
TJ=25OC
1
0.1
Puise Width=300 S
1%DUTY CYCLE
0.01
0.4 0.6 0.8 1.0. 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5-TYPICAL JUNCTION CAPACITANCE
100
60
f=1MHz
40
TJ=25
20
10
4
2
1
.1 .2 .4
1.0 2 4
10 20 40 100
REVERSE VOLTAGE,VOLTS
FIG.2 PEAK FORWARD SURGE CURRENT
30
25
8.3ms Single Half
Sine-Wave
20
15
10
5
0
1
5 1 0 20
50 100
NUMBER OF CYCLES AT 60Hz
FIG.4 -- TYPICAL REVERSE CHARACTERISTICS
100
10
1
0.1
0.01
0.001
0
TJ=125OC
TJ=75 OC
TJ=25OC
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,
FIG.6-TRANSIENT THERMAL IMPEDANCE
100
10
S1(K,M)B
1
0.1
0.01
S1(A-J)B
UNITS MOUNTED on
0.20x0.20''(5.0X5.0mm)X0.5mil
INCHES(0.013mm)
THICK COPPERLAND AREAS
0.1
1
10
100
PULSE DURATON,SEC
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