MMBT5551W 데이터 시트보기 (PDF) - Foshan Blue Rocket Electronics Co.,Ltd.

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MMBT5551W

Silicon NPN transistor in a SOT-323 Plastic Package

Foshan Blue Rocket Electronics Co.,Ltd. 

MMBT5551W

Rev.E Mar.-2016

极限参数 / Absolute Maximum Ratings(Ta=25℃)

参数

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Base Current - Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

符号

Symbol

VCBO

VCEO

VEBO

IC

IB

PC

Tj

Tstg

DATA SHEET

数值

Rating

180

160

6.0

600

300

200

150

-55～150

单位

Unit

V

V

V

mA

mA

mW

℃

℃

电性能参数 / Electrical Characteristics(Ta=25℃)

参数

Parameter

Collector Cut-Off Current

符号

Symbol

测试条件

Test Conditions

ICBO VCB=180V IE=0

Emitter to Base Current

IEBO VEB=6.0V IC=0

hFE(1) VCE=5.0V IC=10mA

DC Current Gain

hFE(2) VCE=5.0V IC=50mA

hFE(3) VCE=5.0V IC=1.0mA

Collector to Emitter Saturation

Voltage

VCE(sat) (1) IC=10mA

VCE(sat) (2) IC=50mA

IB=1.0mA

IB=5.0mA

VBE(sat) (1) IC=10mA

Base to Emitter Saturation Voltage

VBE(sat) (2) IC=50mA

IB=1.0mA

IB=5.0mA

Base to Emitter Voltage

VBE VCE=5.0V IC=10mA

Transition Frequency

Collector output capacitance

Turn-On Time

Turn-Off Time

Storage Time

fT VCE=10V IC=10mA

Cob

VCB=10V

f=1.0MHz

IE=0

ton

toff

IC=100mA

IB1=-IB2=10mA

tstg

最小值 典型值 最大值 单位

Min Typ Max Unit

0.1 μA

0.1 μA

50 200 400

20 160

40 190

0.06 0.15 V

0.09 0.3 V

0.7 1.0 V

0.8 1.0 V

0.68 0.75 V

50 110

MHz

2.2 5.0 pF

0.3

μs

0.4

μs

0.2

μs

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