CM1231−02SO
Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
VP
Operating Supply Voltage
ICC5
Operating Supply Current
VF
Diode Forward Voltage
Top Diode
Bottom Diode
VP = 5 V
IF = 8 mA, TA = 25°C
VESD
IRES
VCL
ESD Protection, Contact Discharge per IEC
61000−4−2 Standard
OUT−to−VN Contact
IN−to−VN Contact
Residual ESD Peak Current on RDUP
(Resistance of Device Under Protection)
Channel Clamp Voltage
Positive Transients
Negative Transients
TA = 25°C
IEC 61000−4−2 8 kV
RDUP = 5 W, TA = 25°C
IPP = 1 A, TA = 25°C, tP = 8/20 ms,
Zap at OUT, Measure at IN
RDYN
Dynamic Resistance
Positive Transients
Negative Transients
IPP = 1 A, TA = 25°C, tP = 8/20 ms,
Zap at OUT, Measure at IN
COUT
OUT Capacitance
f = 1 MHz, VP = 5.0 V, VIN = 2.5 V,
VOSC = 30 mV
(Note 2)
DCOUT Channel to Channel Capacitance Match
f = 1 MHz, VP = 5.0 V, VIN = 2.5 V,
VOSC = 30 mV
RS
Series Resistance
DRS
Channel to Channel Resistance Match
1. All parameters specified at TA = –40°C to +85°C unless otherwise noted.
2. Capacitance measured from OUT to VN with IN floating.
Min
0.60
0.60
±12
±4
Typ
5
0.80
0.80
2.3
+9
–1.4
0.4
0.3
1.5
0.02
1
±10
Max Units
5.5
V
1
mA
V
0.95
0.95
kV
A
V
W
pF
pF
W
±30 mW
http://onsemi.com
3