CM1231-02SO 데이터 시트보기 (PDF) - ON Semiconductor

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CM1231-02SO

2, 4 and 8-Channel Low-Capacitance ESD Protection Array

ON Semiconductor 

CM1231−02SO

Table 3. ELECTRICAL OPERATING CHARACTERISTICS (Note 1)

Symbol

Parameter

Conditions

Min Typ Max Units

VP

Operating Supply Voltage

ICC5

Operating Supply Current

VF

Diode Forward Voltage

Top Diode

Bottom Diode

VP = 5 V

IF = 8 mA, TA = 25°C

5

5.5

V

1

mA

V

0.60 0.80 0.95

0.60 0.80 0.95

VESD

ESD Protection, Contact Discharge per IEC

61000−4−2 Standard

OUT−to−VN Contact

IN−to−VN Contact

TA = 25°C

kV

±12

±4

IRES

Residual ESD Peak Current on RDUP

(Resistance of Device Under Protection)

IEC 61000−4−2 8 kV

RDUP = 5 W, TA = 25°C

A

2.3

VCL

Channel Clamp Voltage

Positive Transients

Negative Transients

IPP = 1 A, TA = 25°C, tP = 8/20 ms,

V

Zap at OUT, Measure at IN

+9

–1.4

RDYN

Dynamic Resistance

Positive Transients

Negative Transients

IPP = 1 A, TA = 25°C, tP = 8/20 ms,

W

Zap at OUT, Measure at IN

0.4

0.3

COUT

OUT Capacitance

f = 1 MHz, VP = 5.0 V, VIN = 2.5 V,

1.5

pF

VOSC = 30 mV

(Note 2)

DCOUT Channel to Channel Capacitance Match

f = 1 MHz, VP = 5.0 V, VIN = 2.5 V,

0.02

pF

VOSC = 30 mV

RS

Series Resistance

1

W

DRS

Channel to Channel Resistance Match

±10 ±30 mW

1. All parameters specified at TA = –40°C to +85°C unless otherwise noted.

2. Capacitance measured from OUT to VN with IN floating.

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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