BTB08-600BWRG 데이터 시트보기 (PDF) - STMicroelectronics
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BTB08-600BWRG Datasheet PDF : 21 Pages
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BTA08, BTB08, T810, T835, T850
Characteristics
Table 3. Standard (4 quadrants)
Symbol
Parameter
IGT (1)
VGT
VGD
IH (2)
VD = 12 V, RL = 33 Ω
VD = VDRM, RL = 33 kΩ, Tj = 125 °C
IT = 500 mA
IL
IG = 1.2 IGT
dV/dt (2)
VD = 67 % VDRM gate open, Tj = 125 °C
(dV/dt)c (2) (dI/dt)c = 3.5 A/ms, Tj = 125 °C
1. Minimum IGT is guaranteed at 5 % of IGT max.
2. For both polarities of A2 referenced to A1
Quadrant
I - II - III
IV
All
All
I - II - III
I - III - IV
II
Max.
Max.
Min.
Max.
Max.
Min.
Min.
BTA08/BTB08
C
B
25
50
50
100
1.3
0.2
25
50
40
50
80
100
200
400
5
10
Unit
mA
V
V
mA
mA
V/µs
V/µs
Table 4. Static electrical characteristics
Symbol
VTM (1)
VTO (1)
RD (1)
ITM = 11 A, tp = 380 µs
threshold on-state voltage
Dynamic resistance
IDRM IRRM
VDRM = VRRM
1. For both polarities of A2 referenced to A1
Test conditions
Tj = 25 °C
Tj = 125 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Value
Unit
Max.
1.55
V
Max.
0.85
V
Max.
50
mΩ
Max.
5
µA
Max.
1
mA
Table 5. Thermal resistance
Symbol
Parameter
Rth(j-c) Max. junction to case thermal resistance (AC)
IPAK / D2PAK / DPAK / TO-220AB
TO-220AB Insulated
Rth(j-a)
Junction to ambient (typ.)
Junction to ambient (typ.)
S = 2 cm² (1)
S = 1 cm²(1)
D²PAK
DPAK
TO-220AB / TO-220AB Insulated
IPAK
1. S = Copper surface under tab.
Value
1.6
2.5
45
70
60
100
Unit
°C/W
°C/W
DS2114 - Rev 15
page 3/21
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