TPDV1025 데이터 시트보기 (PDF) - STMicroelectronics
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TPDV1025 Datasheet PDF : 7 Pages
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Characteristics
TPDVxx25
Figure 5.
Relative variation of gate trigger Figure 6.
current and holding current versus
junction temperature
Non repetitive surge peak on-state
current versus number of cycles
IGT,IH,IL[Tj] / IGT,IH,IL[Tj=25°C]
2.5
2
1.5
IGT
1
IH & IL
ITSM(A)
200
150
100
Tj initial=25°C
t = 20 ms
One cycle
50
0.5
Tj(°C)
0
0
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
1
Number of cycles
10
100
1000
Figure 7.
Non-repetitive surge peak on-state Figure 8.
current for a sinusoidal pulse and
corresponding values of I2t
On-state characteristics (maximum
values)
ITSM(A), I2t (A2s)
1000
ITSM
Tj initial = 25°C
ITM(A)
1000
100 Tj=max
I2t
100
1
tp(ms)
2
5
10
1
10
1
Tj=25°C
VTM(V)
2
3
4
Tj max.:
Vt0=1.1V
Rd=19mΩ
5
6
Figure 9. Safe turn-off operating area
(dV/dt)c(V/µs)
1000
100
Tj initial = 25°C
10
(dI/dt)c(A/ms)
1
1
10
100
4/7
Doc ID 18268 Rev 2
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