IRF620S 데이터 시트보기 (PDF) - Vishay Semiconductors
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IRF620S Datasheet PDF : 8 Pages
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TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
IRF620S, SiHF620S
Vishay Siliconix
101 Top
VGS
15 V
10 V
8.0 V
7.0 V
6.0 V
100
5.5 V
5.0 V
Bottom 4.5 V
10-1
4.5 V
10-2
10-2
91028_01
20 µs Pulse Width
TC = 25 °C
10-1
100
101
VDS, Drain-to-Source Voltage (V)
Fig. 1 - Typical Output Characteristics, TC = 25 °C
101
150 °C
100
25 °C
10-1
4
91028_03
20 µs Pulse Width
VDS = 50 V
5
6
7
8
9
10
VGS, Gate-to-Source Voltage (V)
Fig. 3 - Typical Transfer Characteristics
101
Top
VGS
15 V
10 V
8.0 V
7.0 V
100
6.0 V
5.5 V
5.0 V
Bottom 4.5 V
10-1
4.5 V
10-2
91028_02
20 µs Pulse Width
TC = 150 °C
10-1
100
101
VDS, Drain-to-Source Voltage (V)
Fig. 2 - Typical Output Characteristics, TC = 150 °C
3.0
ID = 4.8 A
VGS = 10 V
2.5
2.0
1.5
1.0
0.5
0.0
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
91028_04
TJ, Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91028
S11-1046-Rev. D, 30-May-11
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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