ATP204 데이터 시트보기 (PDF) - ON Semiconductor

부품명

상세내역

제조사

ATP204

N-Channel Power MOSFET

ON Semiconductor 

ATP204

Electrical Characteristics at Ta=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain “Miller” Charge

Diode Forward Voltage

Symbol

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)1

RDS(on)2

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

Qg

Qgs

Qgd

VSD

Conditions

ID=1mA, VGS=0V

VDS=30V, VGS=0V

VGS=±16V, VDS=0V

VDS=10V, ID=1mA

VDS=10V, ID=50A

ID=50A, VGS=10V

ID=25A, VGS=4.5V

VDS=10V, f=1MHz

See specified Test Circuit.

VDS=15V, VGS=10V, ID=100A

IS=100A, VGS=0V

Switching Time Test Circuit

VIN

10V

0V

VIN

PW=10μs

D.C.≤1%

G

VDD=15V

ID=50A

RL=0.3Ω

D

VOUT

ATP204

P.G

50Ω

S

Ratings

Unit

min

typ

max

30

V

1

μA

±10

μA

1.2

2.6

V

100

S

4.3

5.6 mΩ

6.5

9.1 mΩ

4600

pF

700

pF

390

pF

40

ns

690

ns

205

ns

110

ns

70

nC

22

nC

9.2

nC

1.03

1.2

V

Ordering Information

Device

ATP204-TL-H

Package

ATPAK

Shipping

3,000pcs./reel

memo

Pb Free and Halogen Free

No. A1551-2/7

Share Link: